Key Features

• Type: NPN bipolar junction transistor (BJT)

• Package: TO‑92 (through‑hole)

• Collector‑Emitter Voltage (Vᴄᴇo): 30–40 V

• Collector Current (Iᴄ max): ~600 mA

• DC Current Gain (hFE): 100–300 (depending on manufacturer)

• Power Dissipation: ~0.5 W (without heatsink)

• Transition Frequency (fT): ~250 MHz

📍 Applications

• Low‑power switching: LEDs, relays, small motors

• Signal amplification in audio and small circuits

• Oscillators and general prototype circuits

⚡ Notes