G7S313U (also seen as IRG7S313U or G7S313UPbF) is a power switching transistor of the IGBT type (Insulated‑Gate Bipolar Transistor) originally from International Rectifier (now part of Infineon). 

📌 Key Characteristics

• Type: IGBT (N‑channel) — a high‑power switching transistor

• Voltage Rating (Vce): ~ 330 V

• Collector Current: around 40 A continuous (higher peak pulses)

• Power Dissipation: ~ 78 W

• Package: TO‑263 / D2PAK surface‑mount package

• Max Junction Temp: ~ 150 °C