GT30F125 (30F125) is a power IGBT transistor made by Toshiba, used for high-current switching in power electronics. 

Main Specifications

• Type: IGBT (Insulated Gate Bipolar Transistor)

• Collector-Emitter Voltage (Vce): about 330 V

• Collector Current: up to 200 A (pulse)

• Power Dissipation: ~25 W

• VCE(sat): about 1.9 V

• Package: TO-220F / TO-220SIS 

Pin Configuration

Typical TO-220F pinout:

1. Gate (G)

2. Collector (C)

3. Emitter (E)