GT30F126 is a power IGBT transistor used in high-power electronic switching circuits such as power supplies and plasma display boards. 

Main Specifications

• Type: IGBT (Insulated Gate Bipolar Transistor)

• Collector-Emitter Voltage (Vce): 330 V

• Collector Current (Ic): 30 A (up to about 200 A pulse)

• Power Dissipation: about 18 W

• Collector-Emitter Saturation Voltage: ~ 2.6 V

• Package: TO-220F

• Max Junction Temperature: 150 °C 

Pinout (TO-220F)

1. Gate (G)

2. Collector (C)

3. Emitter (E)

Typical Applications

GT30F126 is commonly used in:

• Plasma TV power boards

• Inverters

• Motor drivers

• UPS power supplies

• Induction heating systems 

Similar / Equivalent Transistors

Possible replacements (depending on circuit):

• GT30F124

• GT30F125

• GT30F127