GT30F131 is a high-power IGBT transistor used in switching and power control applications. It’s part of the Toshiba GT30F series of IGBTs.
Main Specifications
Type: IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (Vce): 330 V
Collector Current (Ic): 30 A continuous, up to 200 A pulse
Power Dissipation: ~25 W
Collector-Emitter Saturation Voltage (Vce(sat)): ~ 1.9 V
Gate Voltage (Vge): ±20–30 V
Package: TO‑220F / TO‑220SIS
Max Junction Temperature: 150 °C
Pin Configuration (TO‑220F)
Gate (G)
Collector (C)
Emitter (E)
Metal tab = Collector