GT30J124 is a power IGBT transistor manufactured by Toshiba, commonly used in high-power switching circuits such as inverters and power supplies. 

Main Specifications

• Type: IGBT (Insulated Gate Bipolar Transistor)

• Collector-Emitter Voltage (Vce): 600 V

• Collector Current (Ic): up to 200 A (pulse)

• Collector-Emitter Saturation Voltage: ~ 2.4 V

• Power Dissipation: about 26 W

• Operating Temperature: -55 °C to +150 °C

• Package: TO-220F / TO-220SIS 

Pinout (TO-220 package)

1. Gate (G)

2. Collector (C)

3. Emitter (E)