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GT30J127

GT30J127

0.0
350 د.ج
En stock et prêt à être expédié
Détails

GT30J127 (often marked 30J127) is a power IGBT transistor used for switching high voltage and high current in power electronics. 

Main Specifications

  • Type: IGBT (Insulated-Gate Bipolar Transistor)

  • Collector-Emitter Voltage (Vce): about 600 V

  • Continuous Collector Current (Ic): about 30 A

  • Pulse Current: up to 200 A

  • Gate Voltage (Vge): ±30 V max

  • Power Dissipation: ~75 W

  • Package: TO-220F / TO-220SIS

  • Max Junction Temperature: ~150 °C 

Pinout

Typical TO-220 IGBT pin configuration:

  1. Gate (G)

  2. Collector (C)

  3. Emitter (E)
    Metal tab = Collector

Typical Applications

This transistor is used in high-power switching circuits, such as:

  • Inverters

  • Motor drivers

  • UPS power supplies

  • Induction heating

  • Plasma TV power circuits

  • Welding machines 

Equivalent / Similar IGBTs

Possible alternatives (depending on circuit):

  • GT30J121

  • GT30J122

  • GT30J126

  • HGTG30N60

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