IRG7R313U

IRG7R313U (sometimes written as IRG7R313UPbF) is a power IGBT transistor (Insulated‑Gate Bipolar Transistor) made by International Rectifier / Infineon. It’s designed for medium‑voltage, high‑current switching applications and is often used in power electronics boards such as plasma display panels (PDP) and other inverter/switching circuits. 

📌 Key Specifications

• Type: IGBT (N‑channel, trench technology) 

• Collector‑Emitter Voltage (Vce): ~ 330 V 

• Continuous Collector Current (Ic): ~ 40 A 

• Repetitive Peak Current (Icm): ~ 160 A 

• Gate‑Emitter Voltage (Vge): ±30 V 

• Power Dissipation (Pd): ~ 78 W 

• Package: TO‑252 / D‑PAK surface mount (sometimes also marketed in TO‑263 variants) 

• Operating Temp.: ~ ‑40 °C to +150 °C 

🔌 Pin Configuration (TO‑252 / D‑PAK)

1. Gate (G) – control input

2. Collector (C) – high‑voltage connection

3. Emitter (E) – return/output
   Large metal tab is typically the Collector.