RJP30E4

RJP30E4 is a power IGBT transistor — a high‑speed switching device used in power electronics for controlling voltage and current efficiently. It is made by Renesas (NEC Electronics) and often found in power control circuits that require fast switching and moderate voltage/current handling. 

📌 Key Specifications

• Type: IGBT (Insulated‑Gate Bipolar Transistor) – N‑channel power switch 

• Collector‑Emitter Voltage (Vce): ~360 V – suitable for moderate‑voltage power circuits 

• Collector Current (Ic): ~35–40 A continuous 

• Pulse Current (Icm): up to 250 A (peak) 

• Gate‑Emitter Voltage (Vge): ±30 V 

• Power Dissipation: ~30 W 

• Package: TO‑263 / D2PAK surface‑mount package