RJP30H2A
RJP30H2A is a high-power IGBT transistor from Rohm, designed for medium-voltage switching in power electronics. It’s commonly used in inverters, motor drives, and power supply applications.
Main Specifications
Type: IGBT (Insulated Gate Bipolar Transistor)
Collector‑Emitter Voltage (Vce): 600 V
Collector Current (Ic): 30 A continuous
Pulse Current (Icm): ~120–150 A
Gate‑Emitter Voltage (Vge): ±20 V
Power Dissipation: ~150 W
Package: TO‑247
Max Junction Temperature: 150 °C (Rohm Datasheet)
Pin Configuration (TO‑247)
Gate (G)
Collector (C)
Emitter (E)
Metal tab = Collector
Typical Applications
Motor controllers / inverters
Switching power supplies (SMPS)
UPS systems
Welding machines
Induction heaters
Similar / Equivalent IGBTs
RJP30H2F
GT30F124 / GT30F125 (Toshiba series)
STGW30NC60W6 (STMicroelectronics)
✅ Simple explanation:
The RJP30H2A is a high-voltage, medium-current IGBT switch capable of handling 600 V and 30 A, suitable for industrial and consumer power electronics like inverters, UPS, and motor drivers.
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