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RJP30H2A

RJP30H2A

0.0
320 د.ج
Plus que 10 en stock, dépêchez-vous
Détails


RJP30H2A

RJP30H2A is a high-power IGBT transistor from Rohm, designed for medium-voltage switching in power electronics. It’s commonly used in inverters, motor drives, and power supply applications.

Main Specifications

  • Type: IGBT (Insulated Gate Bipolar Transistor)

  • Collector‑Emitter Voltage (Vce): 600 V

  • Collector Current (Ic): 30 A continuous

  • Pulse Current (Icm): ~120–150 A

  • Gate‑Emitter Voltage (Vge): ±20 V

  • Power Dissipation: ~150 W

  • Package: TO‑247

  • Max Junction Temperature: 150 °C (Rohm Datasheet)

Pin Configuration (TO‑247)

  1. Gate (G)

  2. Collector (C)

  3. Emitter (E)
    Metal tab = Collector

Typical Applications

  • Motor controllers / inverters

  • Switching power supplies (SMPS)

  • UPS systems

  • Welding machines

  • Induction heaters

Similar / Equivalent IGBTs

  • RJP30H2F

  • GT30F124 / GT30F125 (Toshiba series)

  • STGW30NC60W6 (STMicroelectronics)

✅ Simple explanation:
The RJP30H2A is a high-voltage, medium-current IGBT switch capable of handling 600 V and 30 A, suitable for industrial and consumer power electronics like inverters, UPS, and motor drivers.

I can make a full comparison table of RJP30H2A, RJP63 series, and GT30 series IGBTs showing volta



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RJP30H2A

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