RJP30H2A

RJP30H2A is a high-power IGBT transistor from Rohm, designed for medium-voltage, high-current switching applications.

Main Specifications

• Type: IGBT (Insulated Gate Bipolar Transistor)

• Collector-Emitter Voltage (Vce): 600 V

• Collector Current (Ic): 30 A continuous

• Pulse Current (Icm): 120–150 A

• Gate-Emitter Voltage (Vge): ±20 V

• Power Dissipation: ~150 W

• Package: TO‑247

• Max Junction Temperature: 150 °C

Pin Configuration (TO‑247)

1. Gate (G)

2. Collector (C)

3. Emitter (E)
   Metal tab = Collector

Typical Applications

• Motor controllers / inverters

• Switching power supplies (SMPS)

• UPS systems

• Welding machines

• Induction heating circuits

Similar / Equivalent IGBTs

• RJP30H2F

• GT30F124 / GT30F125 (Toshiba series)

• STGW30NC60W6 (STMicroelectronics)

✅ Simple explanation:
RJP30H2A is a high-voltage, medium-current IGBT switch, capable of handling 600 V and 30 A, widely used in industrial and consumer electronics like inver