RJP63K2

RJP63K2 is a high-power IGBT transistor manufactured by Rohm. It’s designed for medium- to high-voltage switching applications such as inverters, motor drives, and power supplies.

Main Specifications

• Type: IGBT (Insulated Gate Bipolar Transistor)

• Collector-Emitter Voltage (Vce): 600 V

• Collector Current (Ic): 63 A continuous

• Collector Current (pulse): ~200 A

• Gate-Emitter Voltage (Vge): ±20 V

• Power Dissipation: 250 W

• Package: TO‑247

• Max Junction Temperature: 150 °C (Rohm Datasheet)

Pin Configuration (TO‑247)

1. Gate (G)

2. Collector (C)

3. Emitter (E)
   Metal tab = Collector

Typical Applications

• Switching power supplies (SMPS)

• Motor controllers / inverters

• UPS systems

• Welding machines

• Induction heaters